(China (Mainland))
Product Summary
Seventh Generation HEXFET Power IRF1404PBF from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive. The IRF1404PBF TO-220 package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF1404PBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 202A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 143A; (3)IDM Pulsed Drain Current: 808A; (4)PD @TC = 25℃ Power Dissipation: 333 W; (5)Linear Derating Factor: 2.2 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 620 mJ; (8)IAR Avalanche Current: See Fig.12a, 12b, 15, 16 A; (9)EAR Repetitive Avalanche Energy: See Fig.12a, 12b, 15, 16mJ; (10)dv/dt Peak Diode Recovery dv/dt: 1.5 V/ns; (11)TJ Operating Junction: -55 to + 175℃; (12)TSTG Storage Temperature Range -55 to + 175℃; (13)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; Mounting Torque, 6-32 or M3 screw: 10 lbf.in (1.1N.m).
Features
IRF1404PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Automotive Qualified (Q101); (8)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF1404PBF |
International Rectifier |
MOSFET MOSFT 40V 162A 4mOhm 160nC |
Data Sheet |
|
|
||||||||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||||
|
IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
|
|
||||||||||||||||||
|
IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
|
|
||||||||||||||||||
 |
IRF1010E |
International Rectifier |
MOSFET N-CH 60V 84A TO-220AB |
Data Sheet |
|
|
||||||||||||||||||
 |
IRF1010EL |
|
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
Negotiable |
|
||||||||||||||||||
 |
IRF1010ELPBF |
International Rectifier |
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
|
|
||||||||||||||||||
|
IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
|
|
||||||||||||||||||
