(China (Mainland))
Product Summary
The IRFP31N50LPBF is a Power MOSFET.
Parametrics
IRFP31N50LPBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 500V; (2)Gate-Source Voltage VGS: ± 30V; (3)Continuous Drain Current VGS at 10 V, TC = 25 ℃, ID: 31A; TC = 100 ℃: 20 A; (4)Pulsed Drain Currenta IDM: 124W/℃; (5)Linear Derating Factor: 3.7 W/℃; (6)Single Pulse Avalanche Energy EAS: 460 mJ; (7)Repetitive Avalanche Currenta IAR: 31 A; (8)Repetitive Avalanche Energya EAR: 46 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 460 W; (10)Peak Diode Recovery dV/dtc dV/dt: 19 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150; (12)℃; (13)Soldering Recommendations (Peak Temperature) for 10 s: 300d; (14)Mounting Torque: 6-32 or M3 screw: 10 lbf · in; 1.1 N · m.
Features
IRFP31N50LPBF features: (1)Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications; (2)Lower Gate Charge Results in Simpler Drive Requirements; (3)Enhanced dV/dt Capabilities Offer Improved Ruggedness; (4)Higher Gate Voltage Threshold Offers Improved Noise Immunity; (5)Lead (Pb)-free Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFP31N50LPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 31 Amp |
Data Sheet |
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