Product Summary
The BSP75N is an N channel vertical power FET in Smart Power Technology. It is fully protected by embedded protection functions.
Parametrics
Absolute maximum ratings: (1)Continuous drain source voltage: 60 V; (2)Drain source voltage for short circuit protection: 36 V; (3)Continuous input voltage: -0.2 to +10 V; (4)Peak input voltage VIN -0.2 to +20 V; (5)Continuous Input Current -0.2V ≤ VIN ≤ 10V: no limit, VIN<-0.2V or VIN>10V: IIN ≤ 2mA; (6)Operating temperature range: -40 to +150℃; (7)Storage temperature range: -55 to +150℃; (8)Power dissipation (DC): 1.8 W; (9)Unclamped single pulse inductive energy: 550 mJ at ID(ISO) = 0.7 A; Vbb =32V.
Features
Features: (1)Logic Level Input; (2)Input protection (ESD); (3)Thermal shutdown with auto restart; (4)Overload protection; (5)Short circuit protection; (6)Overvoltage protection; (7)Current limitation.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSP75N |
Infineon Technologies |
Power Switch ICs - Power Distribution Smart Low Side 1 Ch 60 V 1.8 W |
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BSP75NTA |
Diodes Inc. |
Power Switch ICs - Power Distribution Self-Protect 60V Sw |
Data Sheet |
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