Product Summary
The IRF7492TRPBF is a HEXFET Power MOSFET, which can be used for high frequency DC-DC converters.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage: 200 V; (2)Gate-to-Source Voltage: ± 20 V; (3)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 3.7 A; (4)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 3.0 A; (5)Pulsed Drain Current: 30 A; (6)PD @TA = 25℃ Power Dissipation: 2.5 W; (7)Linear Derating Factor: 0.02 W/℃; (8)Peak Diode Recovery dv/dt: 9.5 V/ns; (9)Operating Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
Features: (1)Low Gate to Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design; (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF7492TRPBF |
International Rectifier |
MOSFET MOSFT 200V 3.7A 79mOhm 39nC Qg |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF710 |
Vishay/Siliconix |
MOSFET N-Chan 400V 2.0 Amp |
Data Sheet |
|
|
|||||||||||||
IRF710, SiHF710 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF710_R4943 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
|
|||||||||||||
IRF7101 |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
|
|
|||||||||||||
IRF7101PBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
|||||||||||||
IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
|
|