Product Summary

The IRF7492TRPBF is a HEXFET Power MOSFET, which can be used for high frequency DC-DC converters.

Parametrics

Absolute maximum ratings: (1)Drain-Source Voltage: 200 V; (2)Gate-to-Source Voltage: ± 20 V; (3)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 3.7 A; (4)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 3.0 A; (5)Pulsed Drain Current: 30 A; (6)PD @TA = 25℃ Power Dissipation: 2.5 W; (7)Linear Derating Factor: 0.02 W/℃; (8)Peak Diode Recovery dv/dt: 9.5 V/ns; (9)Operating Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

Features: (1)Low Gate to Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design; (3)Fully Characterized Avalanche Voltage and Current.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7492TRPBF
IRF7492TRPBF

International Rectifier

MOSFET MOSFT 200V 3.7A 79mOhm 39nC Qg

Data Sheet

0-1: $1.27
1-25: $0.82
25-100: $0.59
100-250: $0.56
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF710
IRF710

Vishay/Siliconix

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Data Sheet

0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710

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Data Sheet

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International Rectifier

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Data Sheet

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Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
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International Rectifier

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Data Sheet

1-4000: $0.41