SI4490DY-T1-E3

MOSFET, 200V, 2.85A, 8-SOIC, SI4490DY-T1-E3, 2.0W, 4.0A

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PartNumber:: SI4490DY-T1-E3

Brand:: Vishay Siliconix - vishay | Pack: SOIC | D/C: 11+

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Products Upload time: 2012-04-26

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Product Summary

The SI4490DY-T1-E3 is an N-Channel 200-V (D-S) MOSFET.

Parametrics

SI4490DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 200V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ =150℃) when TA =25℃: 4.0A; (4)Continuous Drain Current (TJ =150℃) when TA =70℃: 3.2A; (5)Pulsed Drain Current IDM: 40A; (6)Avalanch Current L=0.1mH: 15A; (7)Continuous Source Current (Diode Conduction): 2.6A; (8)Maximum Power Dissipation when TA = 25℃: 3.1W; (9)Maximum Power Dissipation when TA = 70℃: 2.0W; (10)Operating Junction and Storage Temperature Range: -55℃ to 150℃.

Features

SI4490DY-T1-E3 features: (1) Halogen-free According to IEC 61249-2-21 Definition; (2) TrenchFET Power MOSFETs; (3) Compliant to RoHS Directive 2002/95/EC.